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GaN Wafers

Features of GaN Wafers

Ceramic Forum began handling GaN wafers manufactured by Ammono (Poland) in 2011.The Ammono GaN substrates are manufactured using the ammonothermal method and boast the world's highest crystalline quality.Especially remarkable is the dislocation density (~ x 10E4) which is lower by two orders of magnitude than other manufacturing methods. Boasting high carrier concentration, it is expected to be adopted for use not only in laser diodes but also in power devices (HEMT transistors, diodes, etc.).

Handling sizes from 10 mm □, to 1 to 2 inches, as well as surface orientation C-plane, non-polar plane, semi-polar plane etc. according to requests.
Future use of GaN semiconductors is likely to grow, and it is expected they will be used in a wide variety of applications.

Features of GaN Wafers

Manufacturer Profile

Ammono (Poland)

Ammono (Poland)

Europe's No. 1 free-standing GaN substrate manufacturer.GaN wafers manufactured by this company are rated the highest quality in the world.Based on the Single-crystal GaN R&D project started in 1992 at the University of Warsaw, Poland, Ammono was established in 1999 as a manufacturer specializing in GaN substrate.
As of June 2017, it has a product lineup of m-plane, a-plane and semi-polar plane, as well as c-plane with a maximum aperture of 2 inches.

Examples of Use

  • Examples of Use
  • Lighting (white LED, UV LED)
  • Energy-saving devices (high efficiency, high voltage, high temperature operation devices)
  • Storage devices (blue laser diode)
  • Radio systems (high frequency devices)

Specifications

High-carrier-concentration n-type GaN substrates

Features Units ORIENTATION
c-plane m-plane 20-21-plane
Carrier concentration cm-3 ~10-19
Resistivity Ω・cm 10-3ー10-3
Mobility cm2/V・s ~10-19
Thickness μm On demand < 1mm
Total thickness variation(TTV) μm < 40 ~ 20 ~ 20
Bow μm ≦ 10
FWHM of X-ray rocking curve,(epi-ready surface at 100 μm × 100μm slit) arcsec ~ 20 ~ 30 ~ 20
Dislocation density cm-2 ~5・104
Misorientation deg On demand
Surface finishing   As cut / ground
Roughly polished
Optically polished (RMS ≦ 3nm)
Epi-ready (RMS ≦ 0.5nm)
Available sizes   10 × 10mm
1N
9 × 13mm
13 × 15mm
10 × 10mm
13 × 15mm
Packaging   Separate single wafer container
Special Order Option   Please, contact Sales Department
High-carrier-concentration n-type GaN substrates

High Transparency n-type Gan Substrates Other semi-polar orientation available on request

Features Units ORIENTATION
c-plane
Carrier concentration cm-3 ~3・10-17
Resistivity Ω・cm < 0.5
Mobility cm2/V・s ~250
Thickness μm ≥300
Total thickness variation(TTV) μm ~20
Bow μm ≤10
FWHM of X-ray rocking curve,(epi-ready surface at 100 μm × 100μm slit) arcsec ~20
Dislocation density cm-2 ~5・104
Misorientation deg On demand
Surface finishing   As cut / ground
Roughly polished
Optically polished (RMS < 3nm)
Epi-ready (RMS < 0.5nm)
Available sizes   10 × 10mm2, 1N
Packaging   Separate single wafer container
Special Order Option   Please, contact Sales Department
High Transparency n-type Gan Substrates Other semi-polar orientation available on request

Ultra High Resistivity Semi-Insulating GaN substrates

Features Units ORIENTATION
c-plane
Carrier concentration cm-3 -
Resistivity Ω・cm 109-1012
Mobility cm2/V・s -
Thickness μm ≥300
Total thickness variation(TTV) μm <40
Bow μm ≤10
FWHM of X-ray rocking curve,(epi-ready surface at 100 μm × 100μm slit) arcsec ~20
Dislocation density cm-2 ~5・104
Misorientation deg On demand
Surface finishing   As cut / ground
Roughly polished
Optically polished (RMS < 3nm)
Epi-ready (RMS < 0.5nm)
Available sizes   10 × 10mm2, 1.5N
Packaging   Separate single wafer container
Special Order Option   Please, contact Sales Department
Ultra High Resistivity Semi-Insulating GaN substrates
For any questions or requests regarding our services please feel free to contact us via phone or inquiry form.
For Telephone Inquiries
03-5577-2947
Weekdays 9:30-18:00