The Japan Fine Ceramics Center (JFCC) has announced the development of a three-dimensional defect imaging technology for next-generation gallium nitride (GaN) power semiconductors as a result of joint research with Ceramicforum Co., Ltd. and Mie University.<\/p>\n
In this research, a technology was developed to visualize defects in GaN crystals three-dimensionally using the Crystalline Tester\u00ae CP1 phase contrast polarization microscope system developed by Ceramicforum.<\/p>\n
The Crystalline Tester\u00ae CP1 is a phase contrast polarization microscope for wide-bandgap semiconductors that combines phase contrast microscopy and polarization microscopy. This technology enables highly accurate identification of the in-plane distribution and depth-direction distribution of dislocations within crystals and is expected to contribute to improving the quality of GaN crystals as well as the performance and reliability of GaN power devices.<\/p>\n
Gallium nitride (GaN) is expected to be used in a wide range of fields, including conductive free-standing substrates for applications ranging from blue LEDs and chargers for PCs and other devices to automotive inverters, as well as thin-film epitaxial layers deposited on semi-insulating SiC substrates for applications such as mobile base stations and satellite communications.<\/p>\n
Residual dislocations in GaN crystals may cause deterioration in device performance and reliability, making it an urgent challenge to establish non-destructive, highly accurate techniques for observing and evaluating defects inside crystals.<\/p>\n
For more details, please refer to the JFCC press release below.<\/p>\n
\u25a0 JFCC Press Release \u25a0 Crystalline Tester CP1 Product Information
\nhttps:\/\/www.jfcc.or.jp\/press\/r26_4.html<\/a><\/p>\n
\nhttps:\/\/ceramicforum.co.jp\/en\/inspection\/cs2\/<\/a><\/p>\n