MicroAhead C-V Measurement Systems

These are high-precision C-V measurement systems utilizing mercury probes.
They feature real-time mercury leakage and data reliability monitoring to ensure safe and reliable data acquisition.

・Models: MCV-200 / 300 (Semi-automatic with manual loading) and MCV-200R / 300R (Fully automated platforms equipped with EFEM and dual arms).

・Applications: Carrier density and depletion width profiling for Si/SiC/Ga2O3 epitaxial layers, 2DEG sheet charge density for GaN HEMT structures, and evaluation of flat band voltage and interface trap density for various dielectric layers (SiO2, SiN, etc.). Optional I-V measurements for breakdown voltage and leakage current are also available.

These are non-contact C-V full mapping systems that cause no physical damage to the wafers.
Equipped with a standard EFEM system featuring dual arms and pre-aligners, they are perfectly suited for fully automated mass production lines (SECS/GEM compatible).

・Models: QV-200C / 300S (Supports 6 to 12-inch wafers, fully automated platforms).

・Applications: Evaluation of diffusion length and Fe/Cu contamination in Silicon substrates, and carrier density in SiC/GaN epitaxial layers. It also excels in advanced non-destructive evaluations of dielectric films, including mobile charge, soft breakdown voltage, leakage density, surface residual charge, and plasma damage.

This series features a coplanar probe configuration specialized for evaluating devices on insulating substrates such as sapphire and insulating SiC.
It can also be configured with a vertical probe to provide the same functions as the MCV series.

・Models: Coplane-200 / 300 (Supports 2 to 12-inch wafers, manual loading).

・Applications: Evaluation of GaN HEMT on sapphire/insulated SiC, P-type SiC epi on N-type SiC substrates, and Ga2O3 on insulating substrates. It supports measurements of carrier density, depletion width, 2DEG sheet charge density, barrier height, and threshold voltage.