Ceramic Forum to Exhibit Jointly with RISE at ICSCRM 2026 in Yokohama — Booth C-3
Ceramic Forum to Exhibit Jointly with RISE at ICSCRM 2026 in Yokohama — Booth C-3
Ceramic Forum Co., Ltd. will exhibit jointly with RISE Research Institutes of Sweden at the 23rd International Conference on Silicon Carbide and Related Materials (ICSCRM 2026), taking place at PACIFICO YOKOHAMA North from September 27 to October 2, 2026.
The technical exhibition will be open from September 28 to October 2. Please visit us at booth C-3.
The principal exhibit will be our Crystalline Tester® CP1, a high-resolution 3D (x, y, z) dislocation inspection system and phase-contrast/polarization microscope for wide-bandgap semiconductor wafers.
By combining phase-contrast microscopy with polarization imaging, CP1 provides high-resolution, non-destructive three-dimensional inspection of threading dislocations, inclusions, and extended epitaxial-layer defects such as carrot and triangle defects in transparent wide-bandgap materials.
We will also present Ceramic Forum’s broader portfolio of wide-bandgap semiconductor materials, equipment, and services, including:
– Crystalline Tester® CS2 for high-speed macroscopic crystal-quality diagnostics
– Phystech DLTS measurement systems
– LayTec in-situ monitoring and wafer-mapping systems
– Sciensee SiC and GaN wafer metrology and inspection systems
– SiC bulk and epitaxial wafers and related materials
– GaN, diamond, and other wide-bandgap semiconductor materials
– Custom SiC epitaxy, ion implantation, wafer processing, device prototyping, and foundry services
– Contract crystal evaluation, DLTS analysis, Hall-effect measurement, and other analytical services
Our joint exhibitor, RISE, operates the SiC Technology Pilot Line in Kista, Sweden, supporting the complete development flow from custom SiC epitaxy and device design to wafer processing, prototyping, characterization, reliability assessment, pilot production, and process transfer.
The Kista operation has a long SiC technology lineage encompassing Acreo—now part of RISE—the Ascatron spin-out, and its subsequent development under II-VI/Coherent. In 2026, RISE acquired advanced SiC epitaxy equipment in Kista, further strengthening its capabilities in SiC material and device development.
CP1-Related Poster Presentation
During the conference, we will also present CP1-related research concerning the evaluation of defect structures within a 4H-SiC substrate.
– Presentation number: Th-P-82
– Title: Half-loop Arrays Induced by the Close-up Micropipe-Twins Including a-component in 4H-SiC Substrate
– Authors: Ryo Hattori (Ceramic Forum), Tomoyuki Uchida (Toray Research Center), and Ryuichi Sugie (Ritsumeikan University)
– Date and time: Thursday, October 1, 2026, 3:00–5:00 p.m. JST
– Location: Poster-C, 4th floor, rooms G403+G404
– Track: Track 03 — Extended Defects
We look forward to discussing your requirements for wide-bandgap semiconductor materials, epitaxy, processing, inspection, and characterization. Please visit us at booth C-3 and poster Th-P-82.
Event Information
– Event: 23rd International Conference on Silicon Carbide and Related Materials (ICSCRM 2026)
– Conference dates: September 27–October 2, 2026
– Exhibition dates: September 28–October 2, 2026
– Venue: PACIFICO YOKOHAMA North, Yokohama, Japan
– Booth: C-3
– Joint exhibitors: RISE Research Institutes of Sweden / Ceramic Forum Co., Ltd.
– Official website: icscrm2026.org
To arrange a meeting with us during the conference, please contact us through our inquiry form.
