GaN Epitaxial Service

We offer epitaxial wafers from SweGaN, primarily for high electron mobility transistor (HEMT) applications.

The QuanFINE™ structure is based on the concept of a hybrid material combining GaN and SiC. It integrates the high electron velocity of thin GaN with the high breakdown field strength of bulk SiC, making it suitable for both RF and power transistors.

Epitaxial layers: GaN and AlN epitaxial layers grown by high temperature processes show excellent structural quality. The threading dislocation density is in the low 10^8 cm^-2 range and the AlN nucleation layer contains no crystal grain boundaries.
Low thermal interface resistance: The use of the AlN nucleation layer significantly reduces the thermal boundary resistance (TBR) at the GaN-SiC interface, suppressing temperature rise. As a result, device reliability is improved and lifetime is extended by a factor of 10.

Main application areas

Power devices

The QuanFINE™ structure uses a high-resistance, high-quality semi-insulating SiC substrate that acts as a voltage-blocking layer.

High frequency devices

HEMT heterostructure without buffer layer. The AlN nucleation layer acts as a backside barrier and the electrons in the thin GaN channel layer are confined in a quantum well structure.

SweGaN (Sweden)

A Swedish manufacturer offering customized epitaxial wafers using the latest technology. SweGaN collaborates with Linköping University and Chalmers University of Technology to develop GaN-on-SiC devices.

Since 2020 we have been handling epitaxial wafers from Enkris Semiconductor. The company supplies high quality GaN epiwafers for power electronics, RF and microLED applications. Its strengths include patented technologies in substrate engineering, buffer design and active region optimization to achieve flat, high quality, crack-free epi structures.

Enkris Semiconductor Inc. (China).

Established in 2012 as a GaN epi foundry. Has filed about 200 patent applications in China, the US, Japan and other countries, and has been granted 66 patents. And 80 patent licences from imec. ISO 9001:2015 certified for the design and manufacture of GaN epitaxial materials.

Since 2016 we offer epitaxy services from Seen Semiconductor.
Seen supports the deposition of various epitaxial layers, including GaN, SiC, graphene, InAs and InP, on various substrates, such as free-standing GaN, sapphire, Si, SiC, InP and GaAs. They also support deposition not only on C-planes but also on non-polar and semi-polar surfaces. The company offers highly flexible, customized epiwafers.

Available Epitaxial Wafers

Epitaxy services for GaN power devices

HEMT (High Electron Mobility Transistor)

Diodes

Epitaxy services for GaN high-frequency devices

HEMT

Graphene layer formation

Epitaxial structures for LEDs, lasers, VCSELs, varactors, and photodetectors

Seen Semiconductor (Poland)

Founded in 2011 and based in Warsaw, Poland. A spin-off from the Institute of High Pressure Physics of the Polish Academy of Sciences. Specializes in epitaxial growth of III-V compound semiconductors.