SiC Foundry Service

What is Filtered Ion Implantation for SiC?

Using a silicon film to create arbitrary doping profiles in a single ion implantation.

Allows high-precision doping control of SiC epitaxial layers.

Suppresses intra-wafer concentration error to ±1-2% or less, enabling significant productivity and precision improvements.

The benefits of Filtered Ion Implantation for SiC include below.

Reduction in chip cost: Precise doping of the drift zone

Improved chip performance: Improved lifetime of silicon based HV devices

Enables next generation chip structures: Such as SiC Superjunction MOSFET chips

mi2-factory(Jena, Germany)

Spin-out venture founded in 2016 by professors and researchers who participated in the project “Development of Ion Implantation Control Using Energy Filters” at the University of Jena, Germany.
The company provides ion implantation control technology using energy filters and also offers stand-alone filters.

HZDR Innovation has 2MV, 3MV and 6MV ion implantation equipment to support a wide range of applications from R&D to mass production.

Features of HZDR Innovation's Ion Implantation Service

High energy ion implantation

Implantation up to 50MeV using a 6MV system.

Allows implantation to a depth of 10µm in SiC.

Supports lifetime control using light elements such as H and He, and doping or electric field control using B, P and As - meeting the requirements for power devices.

*Ion implantation service using mi2-factory filters is also available.

HZDR Innovation(Dresden, Germany)

A spin-out venture established to serve to industry using the world's most powerful (~50 MeV) high energy ion implanter owned by the Helmholtz-Zentrum's Dresden laboratory, one of Germany's leading R&D institutions.
The company provides implantation services to manufacturing companies and research institutes in 13 countries, mainly in Europe and the United States.

Provides total solutions for CMP processing, reclaim polishing, wafer thinning, wire sawing, cleaning and process evaluation for various wafers. The reuse of expensive advanced materials such as SiC, GaN and Ga2O3 wafers is effective for both mass production and R&D.

[Regenerable Wafers]

Oxides such as Si, SiC, GaAs, Al2O3, GaN, Ga2O3, LiTaO3

[CMP Processing]

Materials: SiC, GaN, AlN, Al2O3, Ga2O3, etc.

Novasic (Soitec Group), Grenoble, France

Novasic is the leading European service provider for the polishing and processing of advanced materials such as SiC and GaN. Since its foundation in 1995, Novasic has been at the forefront of polishing development for advanced materials research projects in France and Europe. The company also accepts outsourced polishing from wafer manufacturers, and is one of the world's leading providers of polishing and processing in terms of experience and the total number of wafers polished.

Other Japanese Polishing Companies (Japan, multiple providers)

Provide optimal processing tailored to each material. They offer the best solutions tailored to customer needs.

We offer comprehensive solutions for the development of silicon carbide (SiC) power devices from Coherent.
The company has an extensive track record in the development of high-voltage power devices, including the 4.5kV PiN diode announced in 1999.

They provide customisable services at every stage of SiC power device development and prototyping.
Coherent also accepts contract manufacturing for specific processes only, including embedded epitaxy, trench formation, thermal processing and silicon junction (SJ) structure formation.
*Device prototyping is supported up to 150mm wafers.

[Service Details]

Development of SiC power devices (from design to prototyping and evaluation).

In-process silicon carbide (SiC) epitaxy (embedded epitaxy, multi-layer p-n junction formation, etc.).

Trench structure formation (10 µm deep × 2 µm wide trench structure with void-free regrowth).

Oxide film formation using a combination of vapour deposition and high-temperature annealing.

Metal film formation (formation of various metal layers and a protective layer).

II-VI Kista AB (Coherent Group), Sweden

This is a specialised SiC fabrication facility that handles the entire process, from epitaxy services to device design and packaging. It was established in 2011 by a team that has been engaged in SiC R&D since 1993 at Sweden's national research institute, ACREO. It provides proprietary technologies and know-how, including 3D-SiC epitaxial structures, device design and process technologies, built on a strong track record.