GaN Foundry Service
GaN Foundry Service
Since 2020, we have offered high temperature and high pressure annealing services from the Institute of High Pressure Physics (UNIPRESS).
Customised annealing processes are available based on customer requirements.
Service Details
High Temperature Annealing: High temperature annealing repairs defects in semiconductor devices and improves doping profiles.
High Pressure Annealing: Annealing in a high pressure environment optimises device characteristics. This is particularly effective for SiC and GaN devices.
Temperature range 500-2000K
Pressure range: up to 2 GPa
Temperature ramp: 0.1K/h to 1600K/h
Annealing time: 0.1 sec to 1000 hours
Cooling rate: up to 200K/min
*2 GPa pressure also available
UNIPRESS Research Institute (Poland)
UNIPRESS Research Institute (Poland)
The Institute of High Pressure Physics (IHPP), also known as "UNIPRESS", was founded in 1972 by the Institute of High Pressure Physics of the Polish Academy of Sciences. UNIPRESS originally focused on high-pressure research on semiconductors, but now also includes ceramics, high-temperature superconductors, biomaterials and the plasticity of metals.
