GaN Foundry Service
GaN LED Epitaxial Wafers

Saphlux(America) develops and manufactures next-generation light sources for customers in the display and lighting industries.
We also offer custom microLED displays in various sizes and wavelengths.
【Product Details】
Direct View QD-mLED Panel
Applications: Commercial and residential cinemas over 100 inches
Features: Superior color accuracy and color consistency
Does not use arsenic or phosphine, and conforms to international safety standards.
AR MicroLED Display
1. T2-0.39 inch Full-color MicroLED Display:
2. T1-0.12 inch Monochrome MicroLED Display (R, G, B):
【Technology】
Collimation by built-in micro lenses
High PPI MicroLED production
Hybrid bonding of silicon wafers
【Production Capacity】
Silicon-based microdisplay manufacturing line:
Phase 1: 1500㎡, Phase 2: 3000㎡, over 200 production facilities, with a production capacity of 7.2 million panels per year.
【Company Overview】
Started at Yale University in 2015, based on its own inventions of GaN-based technologies, Saphlux has developed two unique products: NPQD microLED and semi-polar GaN materials. Currently, it provides services to over 40 large companies and research institutions around the world, including the United States, China, and Japan, and is expanding its business globally.
Enkris Semiconductor

We started handling Enkris Semiconductor's epitaxial wafers in 2020.
The company provides high-quality GaN epitaxial wafers for power electronics, RF, and microLED applications, with a strong focus on substrate engineering, buffer design, and optimization of the active region, resulting in high-quality, flat, and crack-free epitaxial structures.
【Supported Epitaxial Wafers】
GaN-on-Si Epitaxial Wafers for MicroLEDs
Wafer Size: 4-8 inches
Wavelength: Near-UV, Blue, Green
LED Epitaxial Wafers
Wafer Size: GaN-on-Sapphire: 2-6 inches
Wafer Size: GaN-on-Si: 4-8 inches
Wavelength: Blue, Green, Near-UV
Power Epitaxial Wafers
Wafer Size: GaN-on-Si: 4-8 inches
D-mode, E-mode
Voltage: 200V-1200V
RF Epitaxial Wafers
Wafer Size: GaN-on-HR_Si: 4-8 inches,
Wafer Size: GaN-on-SiC: 2-6 inches
In-situ SiN/ Al(In)N/ GaN Hetero-structure
GaN-on-GaN Epitaxial Wafers
Wafer Size: GaN-on-GaN: 2-4 inches
GaN on Sapphire Template and AlN Template
Size: 2-6 inches
Enkris Semiconductor (China)
Established as a GaN epitaxial foundry in 2012. Has filed over 200 patents in China, the United States, and Japan, and has obtained 66 patents, with imec having licensed 80 patents. ISO9001:2015 certification for the design and manufacturing of GaN epitaxial materials.
Other manufacturers in Europe also offer GaN device development and prototyping services, so please feel free to consult us.