GaN Foundry Service

GaN LED Epitaxial Wafers

Saphlux(America) develops and manufactures next-generation light sources for customers in the display and lighting industries.
We also offer custom microLED displays in various sizes and wavelengths.

【Product Details】

Direct View QD-mLED Panel

Applications: Commercial and residential cinemas over 100 inches

Features: Superior color accuracy and color consistency

Does not use arsenic or phosphine, and conforms to international safety standards.

AR MicroLED Display

1. T2-0.39 inch Full-color MicroLED Display:

2. T1-0.12 inch Monochrome MicroLED Display (R, G, B):

【Technology】

Collimation by built-in micro lenses

High PPI MicroLED production

Hybrid bonding of silicon wafers

【Production Capacity】

Silicon-based microdisplay manufacturing line:

Phase 1: 1500㎡, Phase 2: 3000㎡, over 200 production facilities, with a production capacity of 7.2 million panels per year.

【Company Overview】

Started at Yale University in 2015, based on its own inventions of GaN-based technologies, Saphlux has developed two unique products: NPQD microLED and semi-polar GaN materials. Currently, it provides services to over 40 large companies and research institutions around the world, including the United States, China, and Japan, and is expanding its business globally.

Enkris Semiconductor

We started handling Enkris Semiconductor's epitaxial wafers in 2020.
The company provides high-quality GaN epitaxial wafers for power electronics, RF, and microLED applications, with a strong focus on substrate engineering, buffer design, and optimization of the active region, resulting in high-quality, flat, and crack-free epitaxial structures.

【Supported Epitaxial Wafers】

GaN-on-Si Epitaxial Wafers for MicroLEDs

Wafer Size: 4-8 inches

Wavelength: Near-UV, Blue, Green

LED Epitaxial Wafers

Wafer Size: GaN-on-Sapphire: 2-6 inches

Wafer Size: GaN-on-Si: 4-8 inches

Wavelength: Blue, Green, Near-UV

Power Epitaxial Wafers

Wafer Size: GaN-on-Si: 4-8 inches

D-mode, E-mode

Voltage: 200V-1200V

RF Epitaxial Wafers

Wafer Size: GaN-on-HR_Si: 4-8 inches,

Wafer Size: GaN-on-SiC: 2-6 inches

In-situ SiN/ Al(In)N/ GaN Hetero-structure

GaN-on-GaN Epitaxial Wafers

Wafer Size: GaN-on-GaN: 2-4 inches

GaN on Sapphire Template and AlN Template

Size: 2-6 inches

Enkris Semiconductor (China)

Established as a GaN epitaxial foundry in 2012. Has filed over 200 patents in China, the United States, and Japan, and has obtained 66 patents, with imec having licensed 80 patents. ISO9001:2015 certification for the design and manufacturing of GaN epitaxial materials.

Other manufacturers in Europe also offer GaN device development and prototyping services, so please feel free to consult us.