We are pleased to share exciting news from our partner SweGaN, a European manufacturer of GaN-on-SiC epitaxial wafers.

SweGaN has announced a new collaborative project with Ericsson, Saab, and Chalmers University of Technology, focused on developing high-efficiency GaN-based power amplifiers (PAs) for next-generation 6G networks. This Vinnova-funded project aims to optimize performance in both telecom and defense applications by combining expertise in materials, modeling, device processing, and circuit design.

Using SweGaN’s proprietary QuanFINE® technology, the project targets the 7–15 GHz range (X/Ku bands), aiming to improve energy efficiency and capacity in future wireless systems.

The initiative runs from September 2025 to August 2027, and represents a significant step forward in both academic and industrial innovation.

🔗 Read the full press release from SweGaN:

https://swegan.se/swegan-ericsson-saab-and-chalmers-collaborate-for-6g-gan-power-amplifiers/

For information on SweGaN products handled by our company: https://ceramicforum.co.jp/en/gan-epi/