The Japan Fine Ceramics Center (JFCC) has announced the development of “a three-dimensional defect imaging technology for next-generation gallium nitride power semiconductors” as a result of joint research with our company and Mie University.

Gallium nitride (GaN) is known as a material used in blue LEDs. In recent years, it has also attracted attention as a material for high-efficiency, high-speed power devices used in smartphone and PC chargers, communication base stations, satellite communications, automobiles, and other applications.

Crystal defects such as dislocations present in GaN crystals can cause deterioration in device performance and reliability. Therefore, establishing technologies to accurately observe and evaluate defects inside crystals has become an important challenge.

In this research, a technology was developed to visualize defects in GaN crystals three-dimensionally using CP1, developed by our company. CP1 is a type of optical microscope known as a phase-contrast microscope. This technology enables highly accurate identification of the spatial distribution and types of defects inside crystals, and is expected to contribute to improving the quality of GaN crystals as well as enhancing the performance and reliability of GaN power devices.

Figure 1. Phase-contrast microscope image of a GaN (0001) single crystal. The detected defects are identified as follows:
① dislocation, ② dislocation, ③ crystal boundary, ④ void
Imaging conditions: wavelength 405 nm, objective lens 20×, NA = 0.5, exposure time = 0.003 seconds.

For further details, please refer to the JFCC press release below.

■ JFCC Press Release
https://www.jfcc.or.jp/press/r26_4.html

■ Crystalline Tester CP1 Product Information
https://ceramicforum.co.jp/en/inspection/cs2/#cp1-section

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https://ceramicforum.co.jp/contact/