GaN Substrates

We have been handling single crystal GaN substrates from Ammono since 2011.
High carrier concentration GaN has moved from its initial use in laser diodes to the development of high efficiency power devices (HEMT transistors, diodes) and demand is increasing.
Ammono's single crystal GaN substrates are produced using the ammonothermal method and have dislocation densities (~10⁴/cm²) that are two orders of magnitude lower than other products.

[Available Sizes]

1 inches and 2 inches

[Conductivity Types]

n-type and semi-insulating

[Minimum Order Quantity]

1 wafer and up

Ammono S.A. (Unipress) (Poland)

Based on the GaN single crystal R&D project started at the University of Warsaw in 1992, the company was established in 1999 as a specialized manufacturer of GaN single crystal substrates. The company has excellent technology for manufacturing high quality single crystal substrates using the amonothermal method. The company is now part of the Polish Institute of High Pressure Physics and focuses on research and development.

Since 2016 we have been handling single crystal GaN substrates from Nanowin.
Nanowin's GaN substrates are manufactured using the Hydride Vapour Phase Epitaxy (HVPE) method and offer a wide range of products that are compatible with detailed specifications.

[Available sizes]

10×10.5 mm, 2 inches, 4 inches

[Conductivity Types]

n-type, undoped, semi-insulating

[Orientations]

C-plane, A-plane, M-plane

[Minimum Order Quantity]

To be negotiated

Suzou Nanowin Science and Technology Co.,Ltd. (China)

Nanowin Science and Technology Co, Ltd (Nanowin) was established in 2007 in Suzhou, China. It is a high-tech company specializing in the development of technology for the production of high quality nitride semiconductor materials.

Since 2019 we have been handling GaN single crystal substrates from Eta Research.
Eta Research manufactures its GaN single crystal substrates using the Hydride Vapor Phase Epitaxy (HVPE) process.
Since 2021, they have offered wafer grading based on quality and can provide cost effective wafers depending on the application.
GaN-on-GaN epitaxy services are also available.

[Available sizes]

2 inches and 4 inches

[Conductivity Types]

n-type, undoped, semi-insulating

[Orientation]

C-plane

[Minimum order quantity]

To be negotiated

Eta Research Ltd.(China)

Eta Research Ltd. is a high-tech company founded in April 2015 that focuses on growing large, high-quality GaN wafers that can be produced at affordable prices for the semiconductor industry.The company uses its own HVPE process to produce GaN wafers.